BS170 Equivalent MOSFET. 2N7000, 2N7002, VQ1000J, VQ1000P, IRLML2502. Where to Use BS170 MOSFET? Manufactured through DMOS technology, best suited for low voltage, low current applications like servo motor control, power MOSFET gate drivers and other switching application. BS170 used in most application which requires up to 500mA DC current. The BS170 is a handy N-channel MOSFET capable of continuously driving up to 500mA. This type of MOSFET is often referred to as a logicl level FET since it has a very low gate threshold voltage of around 2.1V. This makes it great for use with digital circuits.
For all of these components, place the subcircuit and the component in their respective folders, then restart LTspice. The component will then show up as a menu selection.
An LTspice Standard Library Replacement
The whole library replacement / addition as one zip file Place in libcmp as a replacement, or carefully extract what you need (Suggested)
Browse or Search on what is in this zip file, and extract what you need
standard.bjt
standard.dio
standard.jft
standard.mos
A Large LTspice Folder from Bordodynov
Bordodynov has kindly shared his entire LTspice folder with tons of parts and examples.
The whole library replacement with additions plus tons of examples as one zip file - about 33 MEG.
See Screen Shot of files removed from the collection containing AEI SPICE Models
These AEI models were removed because of possible copyright violations. However, search on the internet for these models. They are available.
For example AD8331 models are Available HEREAD8332 hereAD8099 hereMC34063 here
This entire zip file has been expanded so you can view the contents, and it will be available to search engines.
You start by opening folders here:
LTspiceIV-library (Directory Style - Drill Down)
LTspiceIV-examples (Directory Style - Drill Down)
Vendor_List (Directory Style - Drill Down)
Mixed_Part_List (Directory Style - Drill Down)
A note on portability of these 'permanent' LTspice Components:
Many comments are made about the lack of portability of creating these permanent parts in LTspice. The approach preferred by most is to include the symbols and SPICE models directly in the folder of the schematic you are testing. PLEASE NOTE that using this method to create permanent LTspice models does not prevent this portability! Create your permanent part, or add the parts from the list below. When you share this schematic with others, or use it on a computer that does not have this component, just copy the 'asy' file and its associated SPICE reference to the 'asc' file you are providing to the foreign computer.
In this way, you can have the best of both worlds: You can build up a permanent library of useful parts, immediately accessible when you create a circuit AND you have portability!
CFL Circuit
13 Watt 120 VAC Compact Fluorescent
Entire Zip file unzip to its own folder(hierarchical example).
Files Below - Click to view as text, Right Click and Save As to download individually.
CFL.asy
CFL.lib
GE13W120V_CFL.asc
winding.asy
Xfrmr.lib
A good study of the CFL, and excellent use of good layout technique and use of LTspice. Thanks a.s.
Some explanation:Before the arc strikes the series resonant circuit is nearly unloaded and, if the arc did not start, would gradually climb in voltage to whatever the open circuit Q of the resonant tank is times the input voltage. This could take quite a few cycles at the resonant frequency. Q will be limited by the loss in the end electrode heater windings and the resonant inductor. This sort of start does not immediately jump to a high voltage.
The conductivity of the CFL depends on the level of ionization of the gas in the tube, which in turn depends on the power per unit length of arc. As the current increases, heating and ionization builds, leading to a thicker, lower resistance arc. This is why the arc exhibits a negative incremental resistance -- increased current leads to a larger diameter arc.
However, at some point, the narrow cross section of the CFL tube limits further conductivity modulation, leading to saturation and to the arc voltage increasing rather than decreasing with increasing current (positive resistance). I would guess that this effect occurs only at damaging levels of current, but that is only a guess.
End effects, cathode fall (larger) and anode fall (smaller) tend to be quasi-fixed voltages that don't depend too much on current in the normal operating range.
Arc conductivity depends on ionization, which depends on average power input. The simplest model for this is to low pass a behavioral source set up with its output proportional to arc power. Note that this thermal averaging effect is what is responsible the arc appearing as a positive resistance at high frequency (the ions stay hot and conductive for a while even if the current goes to zero).
Comparators
LM339
File:LM339.sub LM339 subcircuit. Place in libsub
File:LM339.asy LM339 component. Place in libsymComparators
File:LM339 test.asc Test circuit using the native LM339. You may want to use the alternate solver.
Datasheet
Diodes
Leaky Schottky Diode BAR43
Leaky Diode Model for LTspice Right Click and Save As to download
Datasheet for BAR43
The model in the zip file is for the BAR43 Schottky Diode, but also shows the use of temperature dependence of reverse leakage, and fairly well follows the datasheet.
Soft Recovery Diode
Soft Diode Model for LTspice Right Click and Save As to download
MOSFET Drivers
VOM1271
File:VOM1271.sub VOM1271 Photovoltaic MOSFET Driver model subcircuit. Place in libsub or in your subdirectory
NMOS
2N7002
File:2N7002.sub 2N7002 subcircuit. Place in libsub
File:2N7002.asy 2N7002 component. Place in libsymnmos
File:2N7002 test.asc Test circuit using the native 2N7002 You may want to use the alternate solver
Datasheet
BS170
IRFB4110pbf
IRFB4110 subcircuit Place in libsub
File:IRFB4110pbf.asy IRFB4110 component. Place in libsymnmos
File:Irfb4110 test.asc Test circuit using the native IRFB4110. You may want to use the alternate solver.
Datasheet
IRLR3110
IRLR3110 subcircuit Place in libsub
File:IRLR3110.asy IRLR3110 component. Place in libsymnmos
File:Irlr3110 test.asc Test circuit using the native IRLR3110. You may want to use the alternate solver.
Datasheet
MGSF2N02ELT1
MGSF2N02ELT1 subcircuit Place in libsub
File:MGSF2N02ELT1.asy MGSF2N02ELT1 component. Place in libsymNMOS
File:MGSF2N02ELT1 test.asc Test circuit using the native MGSF2N02ELT1. You may want to use the alternate solver.
Datasheet
NPN Darlington
TIP142
File:TIP142.sub TIP142 subcircuit. Place in libsub
File:TIP142.asy TIP142 symbol. Place in libsymDarlington
File:TIP142-test.asc Test circuit using the native TIP142
DatasheetAdapted from Yahoo LTspice Group Message 28586
Opamps
LM2902 - National Semiconductor
LM324 - National Semiconductor
LM324 subcircuit Place in libsub
File:LM324-national.asy LM324/NS component. Place in libsymOpamps
File:LM324-national test.asc Test circuit using the native LM324. You may want to use the alternate solver.
Datasheet
LM6132A - National Semiconductor
File:LM6132A.MOD LM6132A subcircuit. Place in libsub
File:LM6132A-national.asy LM6132A/NS component. Place in libsymOpamps
File:LM6132A test.asc Test circuit using the native LM6132A. You may want to use the alternate solver.
Datasheet
LMH6642 - National Semiconductor
File:LMH6642.MOD LMH6642 subcircuit. Place in libsub
File:LMH6642.asy LMH6642 symbol. Place in libsymOpamps
File:LMH6642 test native.asc Test circuit using the native LMH6642. You may want to use the alternate solver.
Datasheet
THS4131
THS4131 subcircuit Extract ths4131.txt & place in libsub
File:THS4131.asy THS4131 component. Place in libsymOpamps
File:THS4131 test1.asc THS4131 test circuit, using native THS4131
Datasheet Original files created by Helmut Sennewald at [1].
TL072
File:TL072.sub TL072 subcircuit. Place in libsub
File:TL072.asy TL072 component. Place in libsymOpamps
File:Pweoverdrivepreamp2.asc Overdrive Preamp circuit, using native TL072
Datasheet Original files adapted from [2].
PMOS
BS250
Si7489DP
File:Si7489dp.sub Si7489DP subcircuit. Place in libsub
File:Si7489.asy Si7489DP symbol. Place in libsymPMOS
File:Test-Si7489.asc Test circuit using the native Si7489DP. You may want to use the alternate solver
Datasheet
SiA431DJ
File:SiA431DJ.sub SiA431DJ subcircuit. Place in libsub
File:SiA431DJ.asy SiA431DJ symbol. Place in libsymPMOS
File:Test-Sia413dj.asc Test circuit using the native SiA431DJ. You may want to use the alternate solver
Datasheet
PNP Darlington
TIP127
File:TIP127.sub TIP127 subcircuit. Place in libsub
File:TIP127.asy TIP127 symbol. Place in libsymDarlington
File:TIP127-test.asc Test circuit using the native TIP127
Datasheet
Power Factor Corrector
UC3853
UC3853 subcircuit Place in folder of circuit file (hierarchical example).
File:UC3853.asy UC3853 symbol Place in folder of circuit file.
File:UC3853.asc UC3853 hierarchical subcircuit Place in folder of circuit file.
File:UC3853 Test.asc UC3853 test circuit.
Above files in one download
Datasheet
Great example creating a model from spec sheets (courtesy of analogspiceman)
Solar Panel Subcircuit
2 cell solar panel complete with test circuit
Voltage Regulators
TL431
File:TL431.sub TL431 subcircuit. Place in libsub
File:TL431.asy TL431 component. Place in libsymVoltage Regulators
File:TL431 test.asc Test circuit using the native TL431
Datasheet
An excellent TL431 model, with comparisons to other models
TL431.zip - an improved model for TL431
See a useful discussion here, 'Realistic SPICE model for TL431'.
Compilation
NEW UPDATED VERSIONLtSpiceIV_Plus_12_2009.exe
LTspicePlus_10_08.exe
Roberto Hugo Rodríguez Zubieta in 2005 created this executable, that provides a large number of extra components. First, backup your existing /lib/cmp directory at a minimum, and you may find it easy to just zip your entire /lib directory down. This executable will overwrite /Lib/Cmp with many more components that is based a dated version of the LTspice originals. The existing files are put into a folder /Lib/Cmp/Original. The dated version is not a problem. From LTspice, under 'Tools', selecting 'Sync Release' will restore all of the new models in the latest libs from LTspice. (At least every one I could see, using a Diff program.) Plus now you have many more.
The rest includes more than 90 files in the format *. sub, to denote that they contain subcircuits of devices or *. lib, for the files that contain families of components. This information is added to the folder /sub and it doesn't overwrite any original data. To the folder /sym is added several subfolders with files corresponding to more than 400 symbols.
In the folder examplesLtSpicePlus, there are more of 600 clever examples to be run, these are mainly in format *. asc, although there are also some few ones in format *. cir; plus in this collection there are also near 100 symbols in format *. asy.
The install is in Spanish! The product result is in English. If you come across some 'Replace' options, etc, be prepared to Google some Spanish words to make sure you know what you are selecting. It's a 3.5MEG download.
If you don't speak Spanish, try those instructions:
- say 'Aceptar' (Accept).
- Point the 'Carpeta de Destino' (Destiny Folder) parameter at your LTSpice install-folder, normally it is C:Program FilesLTCLTSpice IV, but it will vary (e.g. in a Portuguese version of Windows it will be 'C:Arquivos de Programas'...).
- If it complains about 'Los siguinentes ficheros ya existen' (The following files already exist), choose what you consider to be most adequate: Sí/No (Yes/No), 'Sí a todo/No a todo' (Yes to replace all/Replace nothing at all) or 'Renombrar' (Rename). It's your choice, I'd say 'yes' after checking if filesizes are similar (i.e. a library you already have).
- The extraction will run, it takes a while (lots of files). If finishes correctly and doesn't give any error, probably all went well, try some examples just to be sure.
Roberto has Spanish documentation and tutorials using LTspice at Precisión, guía para desarrollos con Ltspice.
Someone wants to build an updated version of this? Contact Roberto: precisionorte -at- gmail.com and he can help get you started.
Type Designator: BS170
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.83 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 0.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO92
BS170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BS170 Datasheet (PDF)
0.1. bs170rev1x.pdf Size:77K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingN Channel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value
0.2. bs170 cnv 2.pdf Size:49K _philips
DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source v
0.3. bs170.pdf Size:652K _fairchild_semi
April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resi
0.4. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi
March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s
0.5. 2n7000kl bs170kl.pdf Size:93K _vishay
Mosfet Bs170 Equivalent
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 0.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO92
BS170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BS170 Datasheet (PDF)
0.1. bs170rev1x.pdf Size:77K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingN Channel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value
0.2. bs170 cnv 2.pdf Size:49K _philips
DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source v
0.3. bs170.pdf Size:652K _fairchild_semi
April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resi
0.4. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi
March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s
0.5. 2n7000kl bs170kl.pdf Size:93K _vishay
Mosfet Bs170 Equivalent
2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,
0.6. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay
2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD
0.7. bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf Size:88K _onsemi
BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal
Bs170 Transistor
0.8. bs170g.pdf Size:92K _onsemi
BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal
0.9. bs170p.pdf Size:15K _no
N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati
0.10. bs170f.pdf Size:67K _no
ST3-ANLNACMNO2NCHNEEHNEETB10S7FM EETADOFTODVRILMSECIU3JNAY96SSE-AUR19FAUEETRS*6VlVS0otDS*RSN=5D(O)DGPRMRI DTIVATAKGEAN LMST3O2ASLTMX AIBOUE AIU NSMMRTG.PRMTR SMO VLE UIAAEE YBL AU NTDa-or Vlg VS 6 Vrn eoae 0iSuc tDCnnosrnurttab2 I 05 motuu Da CrnaTm=5 . Ai i e C 1DPldriCrn I 3 Aue Da es nurtDMGtS
0.11. hbs170.pdf Size:403K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,
0.12. bs170fta bs170ftc.pdf Size:17K _zetex
SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=2
0.13. bs170pstoa bs170pstob bs170pstz.pdf Size:15K _zetex
N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati
Datasheet: BFR30, BFR31, BFR84, BFS28R, BFT46, BS107P, BS107PT, BS108, 2SK2996, BS170F, BS170P, BS250F, BS250P, BS270, BSN254, BSN254A, BSP92.
Mosfet Transistor Bs170
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
